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Related Experiment Video

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Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Simulation, Fabrication and Characterization of THz Metamaterial Absorbers

Published on: December 27, 2012

All-Silicon Ultra-Broadband Infrared Light Absorbers.

Kazim Gorgulu¹, Abdullah Gok¹, Mehmet Yilmaz²

¹Department of Electrical and Electronics Engineering, Bilkent University, Ankara, 06800, Turkey.

Scientific Reports

|December 8, 2016

Summary

This summary is machine-generated.

Researchers developed silicon-based mid-infrared absorbers for thermal imaging and spectroscopy. These novel absorbers achieve ultra-broadband absorption using silicon gratings, enabling cost-effective fabrication for advanced applications.

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Area of Science:

Photonics and Materials Science
Nanotechnology and Microfabrication

Background:

Efficient infrared radiation absorption is crucial for thermal imaging and spectroscopy.
Existing infrared absorbers are often incompatible with standard Silicon Very Large Scale Integration (Si VLSI) technology.

Purpose of the Study:

To demonstrate ultra-broadband mid-infrared absorbers fabricated entirely from silicon.
To enable cost-effective, wafer-scale fabrication of infrared absorption micro-structures.

Main Methods:

Utilizing a combination of free carrier absorption, vibrational resonances, and plasmonic resonances.
Designing periodically arranged silicon gratings.
Employing standard optical lithography and deep reactive ion etching (DRIE) for fabrication.

Main Results:

Achieved ultra-broadband absorption exceeding 15 micrometers (5-20 μm) with over 90% average absorptivity.
Demonstrated robust absorption performance across a wide range of incidence angles (up to 50°).
Confirmed absorption performance is independent of polarization.

Conclusions:

Silicon-based gratings offer a promising solution for broadband mid-infrared absorption.
The developed fabrication methods allow for scalable and economical production of these absorbers.
These silicon absorbers are suitable for integration into Si VLSI technology for various infrared applications.