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THz Pulse Detection by Multilayered GeTe/Sb2Te3.

Kotaro Makino1, Shota Kuromiya2, Keisuke Takano2

  • 1Nanoelectronics Research Institute, National Institute of Advanced Industrial Science and Technology (AIST) , Tsukuba, Ibaraki 305-8565, Japan.

ACS Applied Materials & Interfaces
|December 10, 2016
PubMed
Summary

We developed novel terahertz (THz) detectors using multilayered GeTe/Sb2Te3 (MTN) phase-change materials. These MTN systems effectively absorb THz waves, enabling sensitive THz pulse detection through resistance changes.

Keywords:
THz detectionTHz spectroscopychalcogenide superlatticemultilayer systemphase change materialtopological insulator

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Optoelectronics

Background:

  • Terahertz (THz) technology requires efficient and sensitive detection methods.
  • Phase-change materials offer tunable electronic and optical properties.
  • Multilayer topological insulator-normal insulator (MTN) systems present unique characteristics.

Purpose of the Study:

  • To propose and demonstrate THz pulse detection using multilayered GeTe/Sb2Te3 (MTN) materials.
  • To investigate the THz absorption properties of MTN films.
  • To fabricate and test MTN-based THz detection devices.

Main Methods:

  • Fabrication of multilayered GeTe/Sb2Te3 (MTN) films with varying layer repetitions.
  • Terahertz time-domain spectroscopy (THz-TDS) measurements.
  • Fabrication of simple MTN-based THz detectors with DC bias.
  • Measurement of current changes upon THz pulse irradiation.

Main Results:

  • MTN films exhibit significant THz wave absorption, unlike conventional Ge-Te-Sb (GST) alloy films.
  • THz absorption coefficient is dependent on the number of layers in the MTN structure.
  • MTN-based devices show a decrease in resistance upon THz pulse irradiation, confirming detection capability.

Conclusions:

  • Multilayered GeTe/Sb2Te3 (MTN) systems are effective for THz pulse detection.
  • The observed resistance change in MTN materials demonstrates their potential as THz detectors.
  • This work opens avenues for developing novel optoelectronic devices for THz applications.