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Updated: Mar 10, 2026

Recombination Dynamics in Thin-film Photovoltaic Materials via Time-resolved Microwave Conductivity
Published on: March 6, 2017
Soft X-ray Spectroscopy of a Complex Heterojunction in High-Efficiency Thin-Film Photovoltaics: Intermixing and Zn
Michelle Mezher1, Rebekah Garris2, Lorelle M Mansfield2
1Department of Chemistry and Biochemistry, University of Nevada, Las Vegas (UNLV) , Las Vegas, Nevada 89154-4003, United States.
Abstract:
The chemical structure of the Zn(O,S)/Cu(In,Ga)Se2 interface in high-efficiency photovoltaic devices is investigated using X-ray photoelectron and Auger electron spectroscopy, as well as soft X-ray emission spectroscopy. We find that the Ga/(Ga+In) ratio at the absorber surface does not change with the formation of the Zn(O,S)/Cu(In,Ga)Se2 interface. Furthermore, we find evidence for Zn in multiple bonding environments, including ZnS, ZnO, Zn(OH)2, and ZnSe. We also observe dehydrogenation of the Zn(O,S) buffer layer after Ar+ ion treatment. Similar to high-efficiency CdS/Cu(In,Ga)Se2 devices, intermixing occurs at the interface, with diffusion of Se into the buffer, and the formation of S-In and/or S-Ga bonds at or close to the interface.
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