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Related Experiment Video

Updated: Mar 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

Published on: July 24, 2015

Quantum transport localization through graphene.

Saurabh Srivastava¹, Hiori Kino¹, Shu Nakaharai¹

¹WPI-MANA, National Institute for Material Sciences, 1-1 Namiki, Tsukuba, Ibaraki, Japan.

|December 10, 2016

Summary

This summary is machine-generated.

We calculated how atomic defects in graphene affect electronic transport, finding that higher defect density localizes electron flow. This localization is influenced by graphene

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Published on: January 21, 2016

Area of Science:

Condensed Matter Physics
Materials Science
Nanotechnology

Background:

Atomic defects in single-layer graphene disrupt electronic transport.
Anderson localization describes the suppression of wave function propagation due to disorder.

Purpose of the Study:

To calculate the localization of electronic transport induced by atomic defects in graphene.
To analyze the role of defect density and atomic deformations on electronic transport localization.
To investigate the influence of the supporting surface on electronic transport.

Main Methods:

Full-valence electronic structure calculations.
Analysis of defect-induced electronic transport and Anderson localization.
Modeling of atomic-scale deformations in graphene.

Main Results:

Electronic transport localization increases with defect density.
Calculated localization length (ζ) of 3.5 nm at 5% defect density.
Identified elementary electronic interferences leading to Anderson localization.

Conclusions:

Graphene's electronic transport localization is controllable via defect density and atomic deformations.
Surface interactions and chemical modifications significantly impact electronic transport localization in supported graphene.