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Updated: Mar 10, 2026

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Probing Bilayer Grain Boundaries in Large-Area Graphene with Tip-Enhanced Raman Spectroscopy
Kyoung-Duck Park1, Markus B Raschke1, Joanna M Atkin2
1Department of Physics, Department of Chemistry, and JILA, University of Colorado, Boulder, CO, 80309, USA.
Abstract:
The bilayer grain boundaries (GBs) in chemical-vapor-deposition-grown large-area graphene are identified using multispectral tip-enhanced Raman imaging with 18 nm spatial resolution. The misorientation angle of the bilayer GBs is determined from a quantitative analysis of the phonon-scattering properties associated with the modified electronic structure.
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