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Published on: September 8, 2017
Nonreduction-Active Hole-Transporting Layers Enhancing Open-Circuit Voltage and Efficiency of Planar Perovskite Solar
Tiefeng Liu1,2, Fangyuan Jiang1,2, Fei Qin1
1Wuhan National Laboratory for Optoelectronics, and School of Optical and Electronic Information, Huazhong University of Science and Technology , Wuhan 430074, China.
Abstract:
Inverted planar perovskite solar cells using poly(3,4-ethylenedioxythiophene):poly(styrenesulfonate) (PEDOT:PSS) as the hole-transporting layer (HTL) are very attractive because of their low-temperature and easy processing. However, the planar cells with the PEDOT:PSS HTL typically display lower open-circuit voltage (VOC) (about 0.90 V) than that of devices with TiO2-based conventional structure (1.0-1.1 V). The underlying reasons are still not clear. In this work, we report the PEDOT:PSS that is intrinsically p-doped can be chemically reduced by methylamine iodide (MAI) and MAPbI3. The reaction reduces the work function (WF) of PEDOT:PSS, which suppresses the efficient hole collection and yields lower VOC. To overcome this issue, we adopt undoped semiconducting polymers that are intrinsically nonreduction-active (NRA) as the HTL for inverted planar perovskite solar cells. The cells display enhanced VOC from 0.88 ± 0.04 V (PEDOT:PSS HTL, reference cells) to 1.02 ± 0.03 V (P3HT HTL) and 1.04 ± 0.03 V (PTB7 and PTB-Th HTL). The power conversion efficiency (PCE) of the devices with these NRA HTL reaches about 17%.
