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Pinning-depinning transition in a stochastic growth model for the evolution of cell colony fronts in a disordered
Belén Moglia1,2, Ezequiel V Albano1,3, Nara Guisoni1,4
1Instituto de Física de Líquidos y Sistemas Biológicos (IFLYSIB), Universidad Nacional de La Plata, CONICET CCT-La Plata; Calle 59 Nro 789, (1900) La Plata, Argentina.
Abstract:
We study a stochastic lattice model for cell colony growth, which takes into account proliferation, diffusion, and rotation of cells, in a culture medium with quenched disorder. The medium is composed of sites that inhibit any possible change in the internal state of the cells, representing the disorder, as well as by active medium sites that do not interfere with the cell dynamics. By means of Monte Carlo simulations we find that the velocity of the growing interface, which is taken as the order parameter of the model, strongly depends on the density of active medium sites (ρ_{A}). In fact, the model presents a (continuous) second-order pinning-depinning transition at a certain critical value of ρ_{A}^{crit}, such as, for ρ_{A}>ρ_{A}^{crit}, the interface moves freely across the disordered medium, but for ρ_{A}<ρ_{A}^{crit} the interface becomes irreversible pinned by the disorder. By determining the relevant critical exponents, our study reveals that within the depinned phase the interface can be rationalized in terms of the Kardar-Parisi-Zhang universality class, but when approaching the critical threshold, the nonlinear term of the Kardar-Parisi-Zhang equation tends to vanish and then the pinned interface belongs to the quenched Edwards-Wilkinson universality class.
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