Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

P-N junction01:11

P-N junction

1.5K
A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
1.5K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Controlling Parasitic Nucleation in Methylamine-Treated Perovskite Films via Artificial Seeding and Phase-Field Simulations.

Small science·2026
Same author

Resolving ionic spectra of lead-halide perovskites to the nanometer.

Nanoscale·2026
Same author

Transcriptional regulator SATB1 limits CD8<sup>+</sup> T cell population expansion and effector differentiation in chronic infection and cancer.

Nature immunology·2025
Same author

Impact of Antisolvent and Gas Quenching on Wrinkling in Cs<sub>0.15</sub>FA<sub>0.85</sub>Pb(I<sub>0.6</sub>Br<sub>0.4</sub>)<sub>3</sub> Perovskite Films.

ACS applied materials & interfaces·2025
Same author

A Bichromophoric Triazatruxene Tetrad as a Highly Tunable Multicolor Emitter and Its Application in OLEDs.

Chemistry (Weinheim an der Bergstrasse, Germany)·2025
Same author

Satb1 directs the differentiation of T<sub>H</sub>17 cells through suppression of IL-2 expression.

Cell reports·2025

Related Experiment Video

Updated: Mar 10, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

8.0K

Toward High-Efficiency Solution-Processed Planar Heterojunction Sb2S3 Solar Cells.

Eugen Zimmermann1, Thomas Pfadler1, Julian Kalb1

  • 1Department of Physics University of Konstanz 78457 Konstanz Germany.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|December 17, 2016
PubMed
Summary

This study introduces a new method for creating low-cost antimony sulfide (Sb2S3) solar cells. These flat junction cells achieve record open-circuit voltage and over 4% efficiency, paving the way for improved photovoltaic devices.

Keywords:
antimony sulfideefficiency improvementhole transport materialssimulationssolar cells

More Related Videos

Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing
08:24

Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing

Published on: July 16, 2018

8.3K
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

10.2K

Related Experiment Videos

Last Updated: Mar 10, 2026

Developing High Performance GaP/Si Heterojunction Solar Cells
10:31

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

8.0K
Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing
08:24

Key Factors Affecting the Performance of Sb2S3-sensitized Solar Cells During an Sb2S3 Deposition via SbCl3-thiourea Complex Solution-processing

Published on: July 16, 2018

8.3K
Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films
08:12

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on: September 8, 2017

10.2K

Area of Science:

  • Materials Science
  • Renewable Energy
  • Photovoltaics

Background:

  • Low-cost hybrid solar cells utilize thin inorganic absorber layers with organic hole transporters.
  • Antimony sulfide (Sb2S3) is an efficient absorber material for hybrid photovoltaics, typically used with nanostructured electrodes.
  • Flat junction devices offer potential for higher open-circuit voltages compared to nanostructured designs.

Purpose of the Study:

  • To develop a solution-processed, low-cost flat junction Sb2S3 solar cell using a refined chemical bath deposition method.
  • To investigate and address parasitic light absorption by the hole transport material.
  • To achieve the highest open-circuit voltage reported for chemical bath deposited Sb2S3 solar cells.

Main Methods:

  • Fine-tuned chemical bath deposition for fabricating Sb2S3 thin films.
  • Fabrication of flat junction Sb2S3 solar cells.
  • Characterization using back-illuminated devices.
  • Transfer matrix-based optical simulations.

Main Results:

  • Achieved efficiencies exceeding 4% for solution-processed flat junction Sb2S3 solar cells.
  • Reported the highest open-circuit voltage to date for chemical bath deposited Sb2S3 devices.
  • Identified and quantified parasitic light absorption losses in the hole transport material.

Conclusions:

  • The developed method enables efficient, low-cost, flat junction Sb2S3 solar cells.
  • Minimizing parasitic absorption in hole transport layers is crucial for future efficiency gains.
  • This work provides a pathway toward more efficient and cost-effective photovoltaic technologies.