Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K
Semiconductors01:22

Semiconductors

1.7K
There is variation in the electrical conductivity of materials - metals, semiconductors, and insulators that are showcased with the help of the energy band diagrams.
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
1.7K
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

924
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
924

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

A translational model of MASLD-associated HFpEF defines mitochondrial dysfunction and cardiac plasticity during disease progression and regression.

Metabolism: clinical and experimental·2026
Same author

Neurocomputational Mechanisms Linking Future Interaction Prospects to Reactive and Proactive Costly Punishment.

Neuroscience bulletin·2026
Same author

A horizontal connectivity mode in coastal oceans: transport overrides stratification to govern microbiome network stability.

Applied and environmental microbiology·2026
Same author

A Translational Model of MASLD-Associated HFpEF Defines Mitochondrial Dysfunction and Cardiac Plasticity During Disease Progression and Regression.

bioRxiv : the preprint server for biology·2026
Same author

Photothermal-enhanced capillary/siphon-driven self-priming pump for highly efficient recovery of various oils.

Journal of hazardous materials·2026
Same author

Bypassing the yellow phase for extremely stable formamidinium lead iodide perovskite solar cells.

Science (New York, N.Y.)·2026

Related Experiment Video

Updated: Mar 10, 2026

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

10.9K

Interface Design Principles for High-Performance Organic Semiconductor Devices.

Wanyi Nie1, Gautam Gupta1, Brian K Crone1

  • 1Material Synthesis and Integrated Devices MPA-11, Los Alamos National Laboratory Los Alamos NM 87545 USA.

Advanced Science (Weinheim, Baden-Wurttemberg, Germany)
|December 17, 2016
PubMed
Summary

Precise control of organic electronic interfaces with spacer layers significantly reduces energy loss in organic photovoltaic devices. This breakthrough enhances efficiency for various organic electronic applications.

Keywords:
charge transfer stateinterfaceorganic solar cellrecombination

More Related Videos

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.3K
A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing
08:29

A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing

Published on: August 10, 2018

8.4K

Related Experiment Videos

Last Updated: Mar 10, 2026

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
06:21

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles

Published on: March 13, 2017

10.9K
The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
12:32

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on: May 24, 2020

9.3K
A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing
08:29

A 3D-printed Chamber for Organic Optoelectronic Device Degradation Testing

Published on: August 10, 2018

8.4K

Area of Science:

  • Materials Science
  • Organic Electronics
  • Photovoltaics

Background:

  • Organic electronic devices, particularly organic photovoltaic (OPV) devices, suffer from energy losses at donor-acceptor interfaces.
  • Interface recombination is a major limiting factor for achieving high power conversion efficiencies in OPVs.

Purpose of the Study:

  • To demonstrate precise manipulation of organic donor-acceptor interfaces using spacer layers.
  • To suppress interface recombination and improve the performance of organic photovoltaic devices.

Main Methods:

  • Utilized spacer layers to precisely control the interface between donor and acceptor materials in organic photovoltaic devices.
  • Investigated the effect of these interface strategies on both model bilayer and bulk-heterojunction systems.

Main Results:

  • Demonstrated significant suppression of interface recombination through the use of spacer layers.
  • Achieved dramatic performance improvements in both model bilayer and bulk-heterojunction organic photovoltaic systems.
  • Validated the broad applicability of these interface strategies across diverse donor-acceptor systems.

Conclusions:

  • Precise interface engineering with spacer layers is a viable strategy to overcome recombination losses in organic photovoltaics.
  • These findings are fundamentally interesting and technologically relevant for the development of high-efficiency organic electronic devices.
  • The demonstrated interface strategies offer a pathway to enhance the performance and applicability of organic electronic technologies.