Related Experiment Video
Updated: Mar 10, 2026

A Simple and Scalable Fabrication Method for Organic Electronic Devices on Textiles
Published on: March 13, 2017
Interface Design Principles for High-Performance Organic Semiconductor Devices
Wanyi Nie1, Gautam Gupta1, Brian K Crone1
1Material Synthesis and Integrated Devices MPA-11, Los Alamos National Laboratory Los Alamos NM 87545 USA.
Abstract:
Precise manipulation of organic donor-acceptor interfaces using spacer layers is demonstrated to suppress interface recombination in an organic photo-voltaic device. These strategies lead to a dramatic improvement in a model bilayer system and bulk-heterojunction system. These interface strategies are applicable to a wide variety of donor-acceptor systems, making them both fundamentally interesting and technologically relevant for achieving high efficiency organic electronic devices.
Related Concept Videos
Metal-Semiconductor Junctions
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...

