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Published on: August 28, 2018
Ultrafast, Broadband Photodetector Based on MoSe2/Silicon Heterojunction with Vertically Standing Layered Structure
Jie Mao1, Yongqiang Yu2, Liu Wang1
1Institute of Functional Nano and Soft Materials (FUNSOM) Collaborative Innovation Center of Suzhou Nano Science and Technology (Nano-CIC) Jiangsu Key Laboratory for Carbon-Based Functional Materials and Devices Soochow University Suzhou Jiangsu 215123 P. R. China.
Abstract:
A MoSe is constructed by depositing MoSe2 film with vertically standing layered structure on Si substrate. Graphene transparent electrode is utilized to further enhance the separation and transport of photogenerated carriers. The device shows excellent performance in terms of wide response spectrum of UV-visible-NIR, high detectivity of 7.13 × 1010 Jones, and ultrafast response speed of ≈270 ns, unveiling the great potential for the heterojunction for high-performance optoelectronic devices.
