Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

The Quantum-Mechanical Model of an Atom02:45

The Quantum-Mechanical Model of an Atom

60.7K
Shortly after de Broglie published his ideas that the electron in a hydrogen atom could be better thought of as being a circular standing wave instead of a particle moving in quantized circular orbits, Erwin Schrödinger extended de Broglie’s work by deriving what is now known as the Schrödinger equation. When Schrödinger applied his equation to hydrogen-like atoms, he was able to reproduce Bohr’s expression for the energy and, thus, the Rydberg formula governing hydrogen spectra.
60.7K
The de Broglie Wavelength02:32

The de Broglie Wavelength

34.2K
In the macroscopic world, objects that are large enough to be seen by the naked eye follow the rules of classical physics. A billiard ball moving on a table will behave like a particle; it will continue traveling in a straight line unless it collides with another ball, or it is acted on by some other force, such as friction. The ball has a well-defined position and velocity or well-defined momentum, p = mv, which is defined by mass m and velocity v at any given moment. This is the typical...
34.2K
Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

1.2K
The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
1.2K

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Age-related degradation of behavioral and network features of <i>Aplysia</i> escape locomotion.

bioRxiv : the preprint server for biology·2025
Same author

Towards MnN as a replacement for IrMn.

Scientific reports·2024
Same author

Distributions of easy axes and reversal processes in patterned MRAM arrays.

Scientific reports·2023
Same author

The LHC Olympics 2020 a community challenge for anomaly detection in high energy physics.

Reports on progress in physics. Physical Society (Great Britain)·2021
Same author

Current-induced crystallisation in Heusler alloy films for memory potentiation in neuromorphic computation.

Scientific reports·2021
Same author

Compton Scattering Total Cross Section at Next-to-Leading Order.

Physical review letters·2021
Same journal

Erratum: Bacterial Turbulence at Compressible Fluid Interfaces [Phys. Rev. Lett. 136, 138301 (2026)].

Physical review letters·2026
Same journal

Unveiling Light-Quark Yukawa Flavor Structure via Dihadron Fragmentation at Lepton Colliders.

Physical review letters·2026
Same journal

Adaptable Route to Fast Coherent State Transport via Bang-Bang-Bang Protocols.

Physical review letters·2026
Same journal

Topological Transition and Emergence of Elasticity of Dislocation in Skyrmion Lattice: Beyond Kittel's Magnetic-Polar Analogy.

Physical review letters·2026
Same journal

Pound-Drever-Hall Method for Superconducting-Qubit Readout.

Physical review letters·2026
Same journal

Coupling a ^{73}Ge Nuclear Spin to an Electrostatically Defined Quantum Dot in Silicon.

Physical review letters·2026
See all related articles

Related Experiment Video

Updated: Mar 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K

Direct Approach to Quantum Tunneling.

Anders Andreassen1, David Farhi1, William Frost1

  • 1Harvard University, Cambridge, Massachusetts 02138, USA.

Physical Review Letters
|December 17, 2016
PubMed
Summary
This summary is machine-generated.

This study presents a new method for calculating decay rates in quantum field theories using a physical definition of tunneling probability. This approach bypasses complex potential deformations, offering a more direct and potentially precise calculation of decay rates.

More Related Videos

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.3K

Related Experiment Videos

Last Updated: Mar 10, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

10.4K
Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
14:58

Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

Published on: June 3, 2015

15.5K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.3K

Area of Science:

  • Quantum Field Theory
  • Quantum Mechanics
  • Theoretical Physics

Background:

  • Decay rates of quasistable states are typically calculated using instanton methods.
  • Standard instanton methods rely on potential deformations and saddle-point approximations, obscuring physical scales and precision.
  • Existing semiclassical approaches offer limited insight into approximation accuracy.

Purpose of the Study:

  • To derive a direct formula for decay rates in quantum mechanics and quantum field theory.
  • To avoid reliance on unphysical potential deformations and analytic continuations.
  • To provide a more intuitive and precise method for calculating decay rates.

Main Methods:

  • Utilizing a physically defined tunneling probability.
  • Deriving the decay rate formula directly from the Minkowski path integral.
  • Applying the method to both quantum mechanics and quantum field theory.

Main Results:

  • A novel formula for decay rate calculation is derived.
  • The method bypasses the need for unphysical potential deformations.
  • The approach offers potential for nonperturbative calculations and precision.

Conclusions:

  • The new method provides a more direct and aesthetically simple approach to calculating decay rates.
  • This physically grounded method enhances understanding of precision in semiclassical approximations.
  • The derived formula has implications for both theoretical and computational physics.