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Characterizing Far-infrared Laser Emissions and the Measurement of Their Frequencies
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II-VI Quantum Cascade emitters in the 6-8μm range
Thor A Garcia1, Joel De Jesus2, Arvind P Ravikumar3
1Department of Chemistry, The City College of New York, 85 St. Nicolas Terrace, New York, New York 10031 USA; The Graduate Center, City University of New York, New York, New York 10016, USA.
Physica Status Solidi. B, Basic Solid State Physics : PSS
|December 20, 2016
Summary
Researchers developed novel ZnCdSe/ZnCdMgSe quantum cascade (QC) heterostructures for mid-infrared applications. These structures exhibit good material properties and electroluminescence up to room temperature, paving the way for advanced optoelectronic devices.
Area of Science:
- Semiconductor Physics
- Optoelectronics
- Materials Science
Background:
- Quantum cascade (QC) heterostructures are crucial for optoelectronic devices.
- Previous ZnCdMgSe compositions had higher bandgaps, limiting specific applications.
- Lattice-matched InP substrates offer improved material quality.
Purpose of the Study:
- To grow and characterize ZnCdSe/ZnCdMgSe QC heterostructures for 6-8μm operation.
- To investigate the structural and optical properties of the novel heterostructures.
- To assess the electroluminescent performance of fabricated devices.
Main Methods:
- Molecular beam epitaxy (MBE) for heterostructure growth.
- X-ray diffraction (XRD) and photoluminescence (PL) for structural and optical characterization.
- Fabrication of mesa devices for electrical and electroluminescence measurements.
Main Results:
- Successfully grown ZnCdSe/ZnCdMgSe heterostructures with good structural and optical properties.
- Fabricated devices demonstrated a turn-on voltage of 11V and differential resistance of 3.6 Ω.
- Electroluminescence observed at 7.1 μm up to room temperature with a spectral width of ~16% at 80K.
Conclusions:
- The developed ZnCdSe/ZnCdMgSe QC heterostructures are well-behaved electroluminescent devices.
- The use of lattice-matched ZnCdMgSe compositions with a 2.80 eV bandgap is effective.
- Further optimization, including waveguide integration, is needed to achieve lasing.
