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Synthesis of Highly Anisotropic Semiconducting GaTe Nanomaterials and Emerging Properties Enabled by Epitaxy
Hui Cai1, Bin Chen1, Gang Wang2
1School for Engineering of Matter, Transport and Energy, Arizona State University, Tempe, AZ, 85287, USA.
Advanced Materials (Deerfield Beach, Fla.)
|December 20, 2016
Abstract:
A new member of the layered pseudo-1D material family-monoclinic gallium telluride (GaTe)-is synthesized by physical vapor transport on a variety of substrates. The [010] atomic chains and the resulting anisotropic behavior are clearly revealed. The GaTe flakes display multiple sharp photoluminescence emissions in the forbidden gap, which are related to defects localized around selected edges and grain boundaries.
