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Microwave Frequency Comb from a Semiconductor in a Scanning Tunneling Microscope.

Mark J Hagmann1, Dmitry A Yarotski2, Marwan S Mousa3

  • 11Department of Electrical and Computer Engineering,University of Utah,Salt Lake City,UT 84112,USA.

Microscopy and Microanalysis : the Official Journal of Microscopy Society of America, Microbeam Analysis Society, Microscopical Society of Canada
|December 21, 2016
PubMed
Summary

This study demonstrates a new method for semiconductor analysis using laser-excited scanning tunneling microscopy. It enables sub-nanometer carrier profiling by measuring microwave frequency combs, offering an alternative to existing techniques.

Keywords:
laser-assisted tunnelingmicrowave frequency combscanning probe microscopyscanning tunneling microscopyspreading resistance

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Area of Science:

  • Physics
  • Materials Science
  • Nanotechnology

Background:

  • Scanning tunneling microscopy (STM) typically uses a DC tunneling current.
  • Ultrafast lasers can create frequency combs superimposed on the DC current.

Purpose of the Study:

  • To investigate the use of microwave frequency combs generated by laser excitation in STM for semiconductor analysis.
  • To explore the potential for sub-nanometer carrier profiling of semiconductors.

Main Methods:

  • Quasi-periodic excitation of a tunneling junction with a mode-locked ultrafast laser.
  • Measurement of microwave frequency comb harmonics within 200 μm of the tunneling junction.
  • Analysis of signal-to-noise ratio and power fall-off of harmonics for gold and semiconductor samples.

Main Results:

  • Observed microwave frequency comb harmonics with a gold sample, showing a 25 dB signal-to-noise ratio at 14.85 GHz.
  • Measured reduced microwave power and faster fall-off for semiconductor samples compared to gold.
  • Found sensitivity of harmonic attenuation to semiconductor spreading resistance within 1 nm of the junction.

Conclusions:

  • The attenuation of microwave harmonics is sensitive to near-surface semiconductor properties.
  • This laser-excited STM approach shows promise for sub-nanometer carrier profiling.
  • Potential to replace diamond nanoprobes used in scanning spreading resistance microscopy.