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Enabling Ultrasensitive Photo-detection Through Control of Interface Properties in Molybdenum Disulfide Atomic

Sina Najmaei1, Sidong Lei2, Robert A Burke1

  • 1United States Army Research Laboratories, Sensors and Electron Devices Directorate, 2800 Powder Mill Road, Adelphi, Maryland 20783, USA.

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|December 21, 2016
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Summary

Controlling interfaces in molybdenum disulfide (MoS2) photodetectors enhances photoresponsivity but slightly slows response times. Interface engineering, specifically managing charge carrier traps, is key to optimizing these two-dimensional electronic devices.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Interfaces in two-dimensional (2D) materials like molybdenum disulfide (MoS2) significantly influence optoelectronic device performance.
  • The precise mechanisms by which substrate interfaces affect MoS2 photodetector properties remain incompletely understood.

Purpose of the Study:

  • To investigate the impact of substrate interfaces on the photocurrent properties of MoS2-based photodetectors.
  • To elucidate the role of interface engineering in modulating photodetector performance metrics such as photoresponsivity and response time.

Main Methods:

  • Studied MoS2 photodetector photocurrent properties on both silicon dioxide (SiO2) and self-assembled monolayer (SAM)-modified substrates.
  • Analyzed the influence of charge carrier traps at the metal-semiconductor interface on device performance.
  • Investigated the dynamic doping effects caused by light exposure on interface trap states.

Main Results:

  • Interface modification enhances photoresponsivity but leads to a moderate compromise in response times.
  • Charge carrier traps at the interface significantly influence device photoresponse, affecting capture and emission rates.
  • Interface-engineered photodetectors exhibit reduced dark currents and increased on-currents.
  • A record responsivity of 4.5 × 10^3 A/W at 7 V was achieved through optimized interfacial design.

Conclusions:

  • Substrate interface engineering is a critical strategy for optimizing 2D material photodetector performance.
  • Understanding and controlling charge carrier traps at interfaces are essential for maximizing device responsivity and signal gain.
  • This work demonstrates a pathway towards highly responsive and efficient 2D photodetector devices.