Low-Voltage and High-Performance Multilayer MoS₂ Field-Effect Transistors with Graphene Electrodes

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Atomically thin two-dimensional (2D) materials offer unique properties and scalability for advanced electronics.
• Molybdenum disulfide (MoS₂) is a key 2D material studied for optoelectronic applications.

Purpose of the Study:

• To realize low-voltage and high-performance field-effect transistors (FETs).
• To investigate the use of single-layer graphene as the thinnest electrode and multilayer MoS₂ as the channel material.

Main Methods:

• Fabrication of FETs using chemical vapor deposition (CVD)-grown single-layer graphene and multilayer MoS₂.
• Utilizing 15 nm Al₂O₃ as the top-gate dielectric layer.
• Characterization of device performance at room temperature.

Main Results:

• Achieved a two-terminal mobility of 131.2 cm²/(V s) for graphene-contacted ML MoS₂.
• Demonstrated higher mobility compared to previous metal/graphene-contacted MoS₂ devices.
• Confirmed the role of van der Waals bonding at the graphene-MoS₂ interface.

Conclusions:

• Graphene electrodes and multilayer MoS₂ channels enable high-performance, low-voltage FETs.
• Van der Waals interactions and high-k dielectrics are crucial for optimizing device performance.
• This work is a significant step towards practical 2D material-based thin-film transistors.