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MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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MOSFET

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Related Experiment Video

Updated: Mar 9, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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A Vertical Organic Transistor Architecture for Fast Nonvolatile Memory.

Xiao-Jian She¹, David Gustafsson², Henning Sirringhaus¹

¹Cavendish Laboratory, University of Cambridge, J. J. Thomson Avenue, Cambridge, CB3 0HE, UK.

Advanced Materials (Deerfield Beach, Fla.)

|December 23, 2016

Summary

Researchers developed a new vertical organic transistor memory architecture for fast, reliable data storage. This device achieves programming and erasing in under 200 nanoseconds using advanced organic semiconductor materials.

Keywords:

nonvolatile memory polymer electret vertical organic field-effect transistors writing speed

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Area of Science:

Organic electronics
Semiconductor device physics
Materials science

Background:

Organic transistor memory offers potential for flexible and low-cost electronic applications.
Existing organic memory devices often face limitations in speed and reliability.

Purpose of the Study:

To develop a novel device architecture for fast and reliable organic transistor memory.
To investigate the performance of ambipolar conjugated polymers and unipolar small molecules in a vertical transistor configuration for memory applications.

Main Methods:

Fabrication of a vertical organic transistor device architecture.
Integration of high-performance ambipolar conjugated polymers and unipolar small molecules as charge transport layers.
Characterization of device performance, focusing on programming and erasing speeds and threshold voltage stability.

Main Results:

Demonstration of a new vertical organic transistor memory architecture.
Achieved reliable and fast programming and erasing operations in less than 200 nanoseconds.
Successful utilization of ambipolar conjugated polymers and unipolar small molecules for efficient charge transport and memory function.

Conclusions:

The developed vertical organic transistor architecture enables high-speed operation for organic memory.
The combination of specific organic semiconductor materials is effective for achieving fast and reliable threshold voltage modulation.
This advancement paves the way for next-generation high-performance organic electronic memory devices.