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Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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Pressure-dependent semiconductor to semimetal and Lifshitz transitions in 2H-MoTe2: Raman and first-principles

Achintya Bera1, Anjali Singh2, D V S Muthu1

  • 1Department of Physics, Indian Institute of Science, Bangalore 560 012, India.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
|December 24, 2016
PubMed

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