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Polyarylenesulfonium Salt as a Novel and Versatile Nonchemically Amplified Negative Tone Photoresist for
Pulikanti Guruprasad Reddy1, Satyendra Prakash Pal1, Pawan Kumar1
1School of Basic Sciences and ‡School of Computing and Electrical Engineering, Indian Institute of Technology Mandi , Kamand 175 005, Himachal Pradesh, India.
Abstract:
The present report demonstrates the potential of a polyarylenesulfonium polymer, poly[methyl(4-(phenylthio)-phenyl)sulfoniumtrifluoromethanesulfonate] (PAS), as a versatile nonchemically amplified negative tone photoresist for next-generation lithography (NGL) applications starting from i-line (λ ∼ 365 nm) to extreme ultraviolet (EUV, λ ∼ 13.5 nm) lithography. PAS exhibited considerable contrast (γ), 0.08, toward EUV and patterned 20 nm features successfully.
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