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Ambipolar Small-Molecule:Polymer Blend Semiconductors for Solution-Processable Organic Field-Effect Transistors.

Minji Kang1, Hansu Hwang1, Won-Tae Park2

  • 1Research Institute for Solar and Sustainable energies (RISE), Heeger Center for Advanced Materials (HCAM), School of Materials Science and Engineering, Gwangju Institute of Science and Technology (GIST) , Gwangju 500-712, Republic of Korea.

ACS Applied Materials & Interfaces
|December 30, 2016
PubMed
Summary

We developed a one-step method to create high-performance organic semiconductors using a blend of quinoidal biselenophene (QBS) and poly(2-vinylnaphthalene) (PVN). This blend significantly enhances charge mobility in organic field-effect transistors (OFETs).

Keywords:
ambipolar semiconductorsblend organic semiconductorsorganic field-effect transistorsquinoidssmall moleculevertical phase separation

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Area of Science:

  • Organic electronics
  • Materials science
  • Semiconductor fabrication

Background:

  • Developing high-performance organic semiconductors is crucial for advanced electronic devices.
  • Solution processing techniques are desired for cost-effective fabrication of organic thin films.
  • Controlling morphology and interface properties is key to optimizing organic field-effect transistor (OFET) performance.

Purpose of the Study:

  • To fabricate a high-performance organic thin-film semiconductor using a blend of soluble ambipolar small molecules and an insulating polymer binder.
  • To investigate the effect of vertical phase separation on film formation and device performance.
  • To develop a one-step solution processing technique for high-performance OFETs.

Main Methods:

  • Fabrication of organic thin-film semiconductors using a blend solution of quinoidal biselenophene (QBS) and poly(2-vinylnaphthalene) (PVN).
  • Assembly of organic field-effect transistors (OFETs) using a top-gate/bottom-contact device configuration.
  • Characterization using secondary ion mass spectrometry (SIMS), atomic force microscopy (AFM), bias stress tests, and variable-temperature measurements.

Main Results:

  • Uniform film formation with vertical phase separation achieved in a single processing step.
  • QBS/PVN blend semiconductor-based OFETs exhibited nearly four times higher mobility compared to neat QBS.
  • Reduced trap sites at the gate dielectric/semiconductor interface and lower activation energy in the transistor channel were observed.
  • Even distribution of QBS domains with smooth morphology at the bottom of the PVN layer confirmed by SIMS and AFM.

Conclusions:

  • A one-step solution processing technique using soluble ambipolar small molecules and a polymer binder enables high-performance thin-film semiconductor fabrication.
  • The QBS/PVN blend strategy effectively controls film morphology and reduces interfacial trap states, leading to enhanced OFET performance.
  • This approach offers a promising pathway for developing efficient and cost-effective organic electronic devices.