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Purely antiferromagnetic magnetoelectric random access memory
Tobias Kosub1,2, Martin Kopte1,2, Ruben Hühne3
1Institute for Integrative Nanosciences, Institute for Solid State and Materials Research (IFW Dresden e.V.), 01069 Dresden, Germany.
Nature Communications
|January 4, 2017
Summary
We developed a novel antiferromagnetic magnetoelectric random access memory (AF-MERAM) that significantly reduces energy consumption for writing data. This new memory technology is more robust and efficient than existing ferromagnetic-based systems.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Spintronics
Background:
- Magnetoelectric coupling in magnetic random access memory (MERAM) offers high energy efficiency for data writing.
- Ferromagnetic-based MERAM faces limitations in energy efficiency and robustness against magnetic disturbances.
Purpose of the Study:
- To propose and demonstrate a purely antiferromagnetic magnetoelectric random access memory (AF-MERAM).
- To achieve a significant reduction in writing threshold and enhance robustness compared to ferromagnet-based systems.
Main Methods:
- Utilizing the magnetoelectric antiferromagnet Cr2O3 for device fabrication.
- Demonstrating isothermal switching via gate voltage pulses and all-electric readout at room temperature.
- Developing a comprehensive model for magnetoelectric selection mechanisms in thin films.
Main Results:
- Achieved a 50-fold reduction in the writing threshold compared to ferromagnet-based MERAM.
- Demonstrated robust performance against magnetic disturbances and absence of ferromagnetic hysteresis losses.
- Confirmed reliable isothermal switching and all-electric readout at room temperature.
Conclusions:
- The proposed AF-MERAM offers a highly energy-efficient and robust alternative for memory applications.
- The study reveals misfit-induced ferrimagnetism as a key factor in magnetoelectric selection mechanisms.
- The AF-MERAM concept provides a general all-electric interface for antiferromagnets, with broad potential in antiferromagnetic spintronics.
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