Related Experiment Video
Updated: Mar 9, 2026

Author Spotlight: Advancements in High-Performance Thermoelectric Thin Films Through Radio Frequency Magnetron Sputtering
Published on: May 17, 2024
ZnTe Alloying Effect on Enhanced Thermoelectric Properties of p-Type PbTe
Kyunghan Ahn1, Hocheol Shin2,1, Jino Im3
1School of Chemical and Biological Engineering and Institute of Chemical Processes, Seoul National University , Seoul 08826, Republic of Korea.
Abstract:
We investigate the effect of ZnTe incorporation on PbTe to enhance thermoelectric performance. We report structural, microscopic, and spectroscopic characterizations, ab initio theoretical calculations, and thermoelectric transport properties of Pb0.985Na0.015Te-x% ZnTe (x = 0, 1, 2, 4). We find that the solid solubility limit of ZnTe in PbTe is less than 1 mol %. The introduction of 2% ZnTe in p-type Pb0.985Na0.015Te reduces the lattice thermal conductivity through the ZnTe precipitates at the microscale. Consequently, a maximum thermoelectric figure of merit (ZT) of 1.73 at 700 K is achieved for the spark plasma-sintered Pb0.985Na0.015Te-2% ZnTe, which arises from a decreased lattice thermal conductivity of ∼0.69 W m-1 K-1 at ∼700 K in comparison with Pb0.985Na0.015Te.
Related Concept Videos
Types of Semiconductors
Biasing of P-N Junction
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
P-N junction

