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Titanium Trisulfide Monolayer as a Potential Thermoelectric Material: A First-Principles-Based Boltzmann Transport
Jie Zhang1, Xiaolin Liu1, Yanwei Wen1
1State Key Laboratory of Material Processing and Die and Mold Technology and School of Materials Science and Engineering, Huazhong University of Science and Technology , Wuhan 430074, China.
Abstract:
Good electronic transport capacity and low lattice thermal conductivity are beneficial for thermoelectric applications. In this study, the potential use as a thermoelectric material for the recently synthesized two-dimensional TiS3 monolayer is explored by applying first-principles method combined with Boltzmann transport theory. Our work demonstrates that carrier transport in the TiS3 sheet is orientation-dependent, caused by the difference in charge density distribution at band edges. Due to a variety of Ti-S bonds with longer lengths, we find that the TiS3 monolayer shows thermal conductivity much lower compared with that of transition-metal dichalcogenides such as MoS2. Combined with a high power factor along the y-direction, a considerable n-type ZT value (3.1) can be achieved at moderate carrier concentration, suggesting that the TiS3 monolayer is a good candidate for thermoelectric applications.
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