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Updated: Mar 9, 2026

Resonance Fluorescence of an InGaAs Quantum Dot in a Planar Cavity Using Orthogonal Excitation and Detection
Published on: October 13, 2017
Triggered single photon emission up to 77K from ordered array of surface curvature-directed mesa-top GaAs/InGaAs
Abstract:
We demonstrate triggered single photon emission up to 77K from an ordered 5x8 array of InGaAs single quantum dots (SQDs). The SQDs are grown selectively on patterned mesa tops utilizing substrate-encoded size-reducing epitaxy (SESRE). It exploits designed surface-curvature stress gradients to preferentially direct atom migration from mesa sidewalls to the top during growth. The emission from the SQDs exhibits a g(2)(0) of 0.19 ± 0.03 at 8K and decent emission spectral uniformity (standard deviation <1% of emission wavelength). The SESRE QDs are inherently compatible with on-chip integrated light manipulation elements, thereby enabling a path towards integrated nanophotonic systems for quantum information processing.

