Can a Black Phosphorus Schottky Barrier Transistor Be Good Enough?

Area of Science:

• Materials Science
• Condensed Matter Physics
• Nanotechnology

Background:

• Experimental two-dimensional (2D) black phosphorus (BP) transistors are typically Schottky barrier field-effect transistors (SBFETs).
• The ultimate performance limits of these BP SBFETs, especially at the nanoscale, remain largely unexplored.

Purpose of the Study:

• To investigate the theoretical performance limits of monolayer BP SBFETs at the sub-10 nm scale.
• To compare the impact of different electrode materials (graphene vs. titanium) on BP SBFET performance.
• To assess the potential of sub-10 nm BP SBFETs for next-generation logic applications.

Main Methods:

• Utilized ab initio quantum transport simulations.
• Modeled monolayer BP SBFETs with 2D graphene and bulk Ti electrodes.
• Analyzed device performance metrics including Schottky barrier height and channel characteristics.

Main Results:

• Monolayer BP SBFETs with 2D graphene electrodes exhibit superior performance compared to those with bulk Ti electrodes.
• Graphene electrodes offer smaller, tunable Schottky barrier heights and avoid metal-induced gap states.
• Sub-10 nm monolayer BP SBFETs with graphene electrodes surpass monolayer MoS2, carbon nanotubes, and advanced silicon transistors in performance.

Conclusions:

• Sub-10 nm monolayer BP SBFETs with graphene electrodes demonstrate the best intrinsic device performance among reported sub-10 nm 2D material SBFETs.
• These devices meet the stringent requirements for high-performance, low-power logic applications projected for the next decade.
• Monolayer black phosphorus holds significant promise for future nanoscale electronic devices.