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Goos-Hänchen effect for optical vibrational modes in a semiconductor structure.

Diosdado Villegas1, J Arriaga1, Fernando de León-Pérez2

  • 1Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apartado Postal J-48, CP 7250 Puebla, Mexico.

Journal of Physics. Condensed Matter : an Institute of Physics Journal
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PubMed
Summary
This summary is machine-generated.

Optical vibrational mode tunneling through semiconductor heterostructures shows a significant Goos-Hänchen shift effect on tunneling times. This study reports a Goos-Hänchen shift exceeding barrier thickness, useful for semiconductor device design.

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Area of Science:

  • Condensed matter physics
  • Quantum optics
  • Semiconductor physics

Background:

  • Optical vibrational modes (phonons) exhibit quantum tunneling phenomena.
  • Semiconductor heterostructures are key components in modern electronic and optoelectronic devices.
  • The Goos-Hänchen shift describes the lateral displacement of a reflected light beam.

Purpose of the Study:

  • To investigate the tunneling of optical vibrational modes with transverse horizontal polarization on semiconductor heterostructures.
  • To analyze the influence of the Goos-Hänchen shift on tunneling times.
  • To extend the dwell time identity to two-dimensional tunneling and discuss the relation between Goos-Hänchen and Hartman effects.

Main Methods:

  • Theoretical analysis of optical vibrational mode tunneling.
  • Calculation of tunneling times considering the Goos-Hänchen shift.
  • Extension of the dwell time identity to 2D cases.
  • Computation of interference time using vibrational energy density.

Main Results:

  • A large influence of the Goos-Hänchen shift on tunneling times was observed.
  • A Goos-Hänchen shift larger than the barrier thickness was reported for the first time.
  • The dwell time was shown to be the sum of transmission and interference times in 2D.
  • Closed-form expressions for relevant quantities were derived.

Conclusions:

  • The Goos-Hänchen shift significantly impacts optical vibrational mode tunneling times in semiconductor heterostructures.
  • Novel findings include a Goos-Hänchen shift exceeding barrier thickness and an extended dwell time identity for 2D tunneling.
  • The study provides insights potentially valuable for designing advanced semiconductor devices.