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Goos-Hänchen effect for optical vibrational modes in a semiconductor structure.
Diosdado Villegas1, J Arriaga1, Fernando de León-Pérez2
1Instituto de Física, Benemérita Universidad Autónoma de Puebla, Apartado Postal J-48, CP 7250 Puebla, Mexico.
Summary
Optical vibrational mode tunneling through semiconductor heterostructures shows a significant Goos-Hänchen shift effect on tunneling times. This study reports a Goos-Hänchen shift exceeding barrier thickness, useful for semiconductor device design.
Area of Science:
- Condensed matter physics
- Quantum optics
- Semiconductor physics
Background:
- Optical vibrational modes (phonons) exhibit quantum tunneling phenomena.
- Semiconductor heterostructures are key components in modern electronic and optoelectronic devices.
- The Goos-Hänchen shift describes the lateral displacement of a reflected light beam.
Purpose of the Study:
- To investigate the tunneling of optical vibrational modes with transverse horizontal polarization on semiconductor heterostructures.
- To analyze the influence of the Goos-Hänchen shift on tunneling times.
- To extend the dwell time identity to two-dimensional tunneling and discuss the relation between Goos-Hänchen and Hartman effects.
Main Methods:
- Theoretical analysis of optical vibrational mode tunneling.
- Calculation of tunneling times considering the Goos-Hänchen shift.
- Extension of the dwell time identity to 2D cases.
- Computation of interference time using vibrational energy density.
Main Results:
- A large influence of the Goos-Hänchen shift on tunneling times was observed.
- A Goos-Hänchen shift larger than the barrier thickness was reported for the first time.
- The dwell time was shown to be the sum of transmission and interference times in 2D.
- Closed-form expressions for relevant quantities were derived.
Conclusions:
- The Goos-Hänchen shift significantly impacts optical vibrational mode tunneling times in semiconductor heterostructures.
- Novel findings include a Goos-Hänchen shift exceeding barrier thickness and an extended dwell time identity for 2D tunneling.
- The study provides insights potentially valuable for designing advanced semiconductor devices.
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