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Electronic properties and transistors of the NbS2-MoS2-NbS2NR heterostructure

Qi Liu1, Fangping Ouyang1,2,3, Zhixiong Yang2

  • 1School of Physics and Electronics, and Institute of Super-Microstructure and Ultrafast Process in Advanced Materials, Central South University, Changsha 410083, People's Republic of China.

Nanotechnology
|January 12, 2017
PubMed

Keywords:
MoS2field effect transistorfirst-principles calculationheterostructure

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