Solution-Processed Organic Thin-Film Transistor Arrays with the Assistance of Laser Ablation

A key step toward commercialization of organic thin-film transistors (OTFTs) is to manufacture large-area OTFT arrays with desired uniform device performance. In this work, for the first time, solution-processed OTFT arrays were fabricated with the assistance of laser ablation. The source-drain electrodes and the whole devices were patterned by precise control of laser intensity and process path. Compared with traditional methods, this approach significantly simplifies the fabrication process of OTFT arrays with high quality and high yield. A careful selection of laser processing parameters is key to obtaining high quality and high performance OTFT arrays. The grazing incidence X-ray diffraction experiments and device performance tests ensured the selection of proper laser ablation intensity. Eventually, the OTFT arrays on silicon wafer and ITO glass exhibited uniform electrical characteristics with the mean mobility of 0.16 and 0.10 cm² V^-1 s^-1, respectively. These results demonstrated that the laser ablation process provides a promising tool to simplify the fabrication of solution-processed OTFT arrays with low cost and high yield, which has great potential in upscaling of high performance OTFT arrays for display and circuits.