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Inter-Layer Coupling Induced Valence Band Edge Shift in Mono- to Few-Layer MoS2
Daniel J Trainer1, Aleksei V Putilov1, Cinzia Di Giorgio1
1Physics Department, Temple University, Philadelphia PA 19122, USA.
Scientific Reports
|January 14, 2017
Summary
Highly crystalline molybdenum disulfide (MoS2) was synthesized and studied. Its electronic properties, particularly the band gap, were found to change with layer thickness due to valence band edge shifts, impacting future electronics.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Nanotechnology
Background:
- Molybdenum disulfide (MoS2) is a 2D semiconductor with potential for atomically thin electronics.
- Understanding nanoscale electronic properties of MoS2 remains a challenge.
Purpose of the Study:
- Investigate the electronic properties of MoS2 as a function of layer number.
- Clarify the mechanism behind the thickness-dependent band gap variation.
- Provide insights for MoS2-based electronic devices.
Main Methods:
- Synthesis of highly crystalline MoS2 islands using chemical vapor deposition.
- High-resolution scanning tunneling microscopy and spectroscopy (STM/STS).
- Photoemission electron microscopy/spectroscopy (PEEM) and micro-angle-resolved photoemission spectroscopy (μ-ARPES).
- Green's function based electronic structure calculations.
Main Results:
- Detailed nanoscale electronic properties of MoS2 were revealed.
- Band gap variation with layer number was observed, linked to valence band edge shifts.
- The role of interfacial sulfur atoms in band gap modulation was clarified.
Conclusions:
- Thickness significantly influences MoS2 electronic properties, specifically the band gap.
- The findings offer crucial insights into MoS2 junction properties.
- This research impacts the development of MoS2-based electronics.
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