Related Experiment Video

Updated: Mar 8, 2026

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station
05:57

Characterization of SiN Integrated Optical Phased Arrays on a Wafer-Scale Test Station

Published on: April 1, 2020

8.6K

Synchronous driving scheme for silicon-based optical switches to critically compensate for thermo-optic effect in

Mingle Liao, Baojian Wu, Wei Huang

    Applied Optics
    |January 14, 2017
    PubMed

    More Related Videos

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    8.9K
    Quasi-light Storage for Optical Data Packets07:45

    Quasi-light Storage for Optical Data Packets

    Published on: February 6, 2014

    11.4K

    Related Concept Videos

    Biasing of Metal-Semiconductor Junctions01:27

    Biasing of Metal-Semiconductor Junctions

    Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
    In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
    735
    MOSFET: Enhancement Mode01:22

    MOSFET: Enhancement Mode

    Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
    In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
    924
    Biasing of FET01:22

    Biasing of FET

    Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
    In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
    809
    Biasing of P-N Junction01:16

    Biasing of P-N Junction

    The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
    In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
    2.3K
    Diode: Forward bias01:20

    Diode: Forward bias

    In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
    The behavior of a diode in forward bias...
    2.5K
    Carrier Generation and Recombination01:22

    Carrier Generation and Recombination

    Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
    This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
    Indirect generation involves an...
    1.4K