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Updated: Mar 8, 2026

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Epitaxial Growth of Perovskite Strontium Titanate on Germanium via Atomic Layer Deposition
Published on: July 26, 2016
12.9K
Highly Oriented SrTiO3 Thin Film on Graphene Substrate.
Sang A Lee, Jae-Yeol Hwang1, Eun Sung Kim1
1Center for Integrated Nanostructure Physics, Institute for Basic Science (IBS) , Suwon 16419, Korea.
ACS Applied Materials & Interfaces
|January 17, 2017
Summary
Integrating crystalline perovskite oxide thin films onto silicon has been challenging. This study demonstrates using a graphene substrate with pulsed laser deposition to grow crystalline strontium titanate (SrTiO3) films on silicon, enabling new device applications.
Area of Science:
- Materials Science
- Solid State Physics
- Nanotechnology
Background:
- Integrating complex oxide thin films with silicon electronics is hindered by challenges in achieving crystalline growth on silicon substrates.
- Perovskite oxides offer unique functionalities but their integration into silicon-based technologies remains difficult.
Purpose of the Study:
- To develop a method for growing crystalline perovskite oxide thin films on silicon.
- To investigate the role of graphene as a substrate for thin film growth.
- To enable the integration of functional complex oxides into silicon-based devices.
Main Methods:
- Pulsed laser deposition (PLD) was employed to deposit strontium titanate (SrTiO3) thin films.
- Graphene served as a 2D substrate for the SrTiO3 film growth on silicon.
- Characterization of the thin film structure and interface properties was performed.
Main Results:
- A highly (00l)-oriented crystalline SrTiO3 thin film was successfully grown on silicon using a graphene substrate.
- Partial epitaxy facilitated the crystalline growth of the SrTiO3 film.
- Graphene acted as an effective diffusion barrier, promoting a sharp interface and suppressing chemical intermixing.
Conclusions:
- Graphene is a crucial 2D substrate and diffusion barrier for growing crystalline perovskite oxides on silicon.
- The developed method overcomes a critical obstacle in integrating functional oxides with silicon technologies.
- This approach expands the potential for novel device applications utilizing functional complex oxides.

