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Optimization of InGaAs/InAlAs Avalanche Photodiodes
Jun Chen1, Zhengyu Zhang2, Min Zhu2
1School of Electronic and Information Engineering, Soochow University, Suzhou, 215006, China. junchen@suda.edu.cn.
Nanoscale Research Letters
|January 17, 2017
Summary
This study simulates avalanche photodiodes (APDs), revealing how charge and multiplication layer properties impact operating voltages. Increased layer thickness and doping affect punchthrough and breakdown voltages in InGaAs/InAlAs SAGCM APDs.
Area of Science:
- Semiconductor device physics
- Optoelectronics
- Materials science
Background:
- Avalanche photodiodes (APDs) are critical for high-sensitivity optical detection.
- Separate Absorption, Grading, Charge, and Multiplication (SAGCM) APDs offer enhanced performance.
- Understanding layer effects is crucial for optimizing APD design.
Purpose of the Study:
- To investigate the influence of charge and multiplication layers on the operating voltage ranges of InGaAs/InAlAs SAGCM APDs.
- To analyze the relationship between layer thicknesses, doping concentrations, and key voltage parameters.
Main Methods:
- Two-dimensional (2D) device simulation.
- Parametric study of charge and multiplication layer properties.
Main Results:
- Increased charge and multiplication layer thicknesses and doping concentrations elevate punchthrough voltage.
- Higher doping concentrations and increased charge layer thickness reduce breakdown voltage.
- Multiplication layer thickness affects breakdown voltage non-monotonically: initial rapid decline followed by a slight rise.
Conclusions:
- Device layer parameters significantly influence SAGCM APD operating voltages.
- Simulation provides insights for tailoring InGaAs/InAlAs APDs for specific applications.
- Optimization of charge and multiplication layers is key to achieving desired performance.
