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Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
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Identifying the Collective Length in VO2 Metal-Insulator Transitions.

Takeaki Yajima1, Tomonori Nishimura1, Akira Toriumi1

  • 1Department of Materials Engineering, University of Tokyo, Bunkyo, Tokyo, 113-8656, Japan.

Small (Weinheim an Der Bergstrasse, Germany)
|January 17, 2017
PubMed
Summary

Researchers identified the "collective length" in vanadium dioxide (VO2) metal-insulator transitions by controlling nanoscale dopant distribution. This finding enables the design of novel collective electronic devices.

Keywords:
collectivitydomain boundary energyepitaxial heterostructuresnanoscale phase transition, metal-insulator transitions

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Vanadium dioxide (VO2) exhibits a metal-insulator transition (MIT) crucial for electronic applications.
  • Understanding the nanoscale mechanisms governing this transition is key to material design.

Purpose of the Study:

  • To identify and characterize the
  • collective length
  • in VO2 thin films.
  • To investigate the crossover from local to collective MIT behavior.

Main Methods:

  • Fabrication of VO2 thin films with controlled nanoscale dopant distribution.
  • Characterization of the MIT behavior at the nanoscale.

Main Results:

  • The
  • collective length
  • was identified by manipulating dopant distribution.
  • A crossover from local to collective transition was observed.
  • Increased instability of the metal-insulator domain boundary drives the collective transition.

Conclusions:

  • The identified
  • collective length
  • governs the collective MIT in VO2.
  • This understanding facilitates the design of advanced collective electronic devices.