Theory of Metallic Conduction
Properties of Transition Metals
Debye–Huckel–Onsager Conductance Equation
Biasing of Metal-Semiconductor Junctions
Metal-Semiconductor Junctions
Trends in Lattice Energy: Ion Size and Charge
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Updated: Mar 8, 2026

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model
Published on: May 23, 2018
Takeaki Yajima1, Tomonori Nishimura1, Akira Toriumi1
1Department of Materials Engineering, University of Tokyo, Bunkyo, Tokyo, 113-8656, Japan.
Researchers identified the "collective length" in vanadium dioxide (VO2) metal-insulator transitions by controlling nanoscale dopant distribution. This finding enables the design of novel collective electronic devices.
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