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Two-Dimensional SnS: A Phosphorene Analogue with Strong In-Plane Electronic Anisotropy
Zhen Tian1,2,3, Chenglei Guo1,2,3, Mingxing Zhao2,3
1Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences , Shanghai 201800, China.
ACS Nano
|January 21, 2017
Summary
Two-dimensional tin sulfide (2D SnS) exhibits significant electronic anisotropy. Its charge carrier mobility is higher along the zigzag direction, primarily due to tin vacancies causing p-type conductivity.
Area of Science:
- Materials Science
- Condensed Matter Physics
- Solid State Chemistry
Background:
- Two-dimensional (2D) materials like phosphorene show unique electronic properties.
- Tin sulfide (SnS) is an analogue of phosphorene with potential for novel electronic applications.
- Understanding anisotropic electronic behavior is crucial for device design.
Purpose of the Study:
- To investigate the anisotropic electronic properties of 2D SnS crystals.
- To determine the origin of the observed p-type conductivity and anisotropy.
- To correlate experimental findings with theoretical predictions.
Main Methods:
- Growth of 2D SnS crystals using physical vapor transport.
- Characterization using transmission electron microscopy and polarized Raman spectroscopy.
- Fabrication and electrical transport measurements of 2D SnS field-effect transistors with a cross-Hall-bar structure.
Main Results:
- Identified zigzag and armchair crystallographic directions in 2D SnS.
- Observed heavily hole-doped (∼10^19 cm^-3) conductivity with strong in-plane anisotropy.
- Achieved room-temperature mobility exceeding 20 cm^2 V^-1 s^-1 along the zigzag direction, 1.7 times higher than in the armchair direction.
- Determined an acceptor energy level of ∼45 meV, matching calculated defect level for Sn vacancies.
Conclusions:
- The strong in-plane anisotropy in 2D SnS is attributed to the effective mass ratio along different crystallographic directions.
- Tin vacancies are identified as the primary cause of the p-type conductivity in 2D SnS.
- Experimental results align well with theoretical predictions, validating the understanding of 2D SnS electronic properties.
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