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Fabrication Technology and Characteristics of a Magnetic Sensitive Transistor with nc-Si:H/c-Si Heterojunction

Xiaofeng Zhao1, Baozeng Li2, Dianzhong Wen3

  • 1School of Electronic Engineering, Heilongjiang University, Harbin 150080, China. zhaoxiaofeng@hlju.edu.cn.

Sensors (Basel, Switzerland)
|January 25, 2017
PubMed

Keywords:
MEMS technologymagnetic sensitive transistornc-Si:H/c-Si heterojunctiontemperature characteristics

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