Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Related Concept Videos

Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)

Insensitive Nuclei Enhanced by Polarization Transfer (INEPT)

Insensitive Nuclei Enhanced by Polarization Transfer (INEPT) is an advanced Nuclear Magnetic Resonance (NMR) technique specifically designed to detect and enhance the signals of low-abundance nuclei, such as carbon-13 and nitrogen-15, in small molecules. The fundamental principle behind INEPT is the transfer of polarization from a more abundant and highly polarizable nucleus, typically hydrogen-1, to the low-abundance nucleus of interest. This process effectively boosts the NMR signal of the...

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by

Same author

Remodeling of the tuberization-controlling FLOWERING LOCUS T genes from non-tuberizing ancestor to potato.

The Plant journal : for cell and molecular biology·2026

Same author

A Minimal Four-Enzyme Suite Enables Biosynthesis of the C<sub>20</sub> Diterpenoid Alkaloid Atisinium.

Molecular plant·2026

Same author

P2Y6 receptor in the superior cervical ganglion: a key mediator of post-myocardial ischemic sympathetic hyperexcitability via NF-κB mediated neuroinflammation.

Purinergic signalling·2026

Same author

Tumor Necrosis Factor Superfamily 14: A Potential Predictor of Atrial Fibrillation Recurrence After Catheter Ablation.

Clinical cardiology·2026

Same author

A Conserved Fibroblast-Myeloid Gene Signature in Digestive Cancers: Multi-Omics Integration Identifies <i>DCN</i>, <i>COL10A1</i>, <i>CTHRC1</i>, and <i>TREM2</i> as Candidate Microenvironmental Markers.

International journal of molecular sciences·2026

Same author

Maternal hypertension and survival without bronchopulmonary dysplasia in preterm infants: a meta-analysis of cohort studies.

The journal of maternal-fetal & neonatal medicine : the official journal of the European Association of Perinatal Medicine, the Federation of Asia and Oceania Perinatal Societies, the International Society of Perinatal Obstetricians·2026

Search research articles

Related Experiment Video

Updated: Mar 8, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Nonpolar InGaN/GaN Core-Shell Single Nanowire Lasers.

Changyi Li¹, Jeremy B Wright², Sheng Liu^2,3

¹Center for High Technology Materials, University of New Mexico , 1313 Goddard Street SE, Albuquerque, New Mexico 87106, United States.

|January 25, 2017

Summary

We demonstrate room-temperature lasing in nonpolar indium gallium nitride/gallium nitride (InGaN/GaN) core-shell nanowires. This breakthrough offers a new pathway for developing efficient, low-threshold nanoscale lasers for UV-visible light applications.

Keywords:

GaN InGaN Nonpolar core−shell laser nanowire

More Related Videos

Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation

Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation

Published on: February 25, 2017

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Related Experiment Videos

Last Updated: Mar 8, 2026

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Analysis of Contact Interfaces for Single GaN Nanowire Devices

Published on: November 15, 2013

Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation

Fabrication of 1-D Photonic Crystal Cavity on a Nanofiber Using Femtosecond Laser-induced Ablation

Published on: February 25, 2017

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Evaluating Plasmonic Transport in Current-carrying Silver Nanowires

Published on: December 11, 2013

Area of Science:

Semiconductor Nanowire Lasers
Quantum Well Engineering
Optoelectronics

Background:

Indium gallium nitride (InGaN) and gallium nitride (GaN) core-shell nanowires are promising for optoelectronic devices.
Nonpolar crystal orientations are crucial for efficient light emission in InGaN/GaN systems.
Achieving low-threshold lasing in nanoscale devices remains a significant challenge.

Purpose of the Study:

To report lasing from nonpolar p-i-n InGaN/GaN multi-quantum well core-shell single-nanowire lasers.
To investigate the performance of these nanowire lasers under optical pumping at room temperature.
To explore the potential of this architecture for nanoscale light emitters.

Main Methods:

Fabrication of nonpolar p-i-n InGaN/GaN core-shell nanowires using a hybrid top-down and bottom-up approach.
Optical pumping to induce lasing.
Micro-photoluminescence spectroscopy to measure modal gain spectra and gain curves.
Hakki-Paoli method for gain analysis.
Mode simulations to understand optical confinement.

Main Results:

Successful demonstration of lasing in nonpolar InGaN/GaN core-shell nanowire lasers at room temperature.
Significantly lower lasing thresholds compared to semipolar nanowires, attributed to high optical gain.
Enhanced optical confinement in annular-shaped modes due to the core-shell architecture.
Shorter cavity lengths and reduced active region volume achieved.

Conclusions:

The p-i-n nonpolar core-shell nanowire architecture is viable for low-threshold, coherent UV-visible nanoscale light emitters.
This work opens a route toward monolithic, integrable, electrically injected single-nanowire lasers.
The findings pave the way for next-generation nanoscale optoelectronic devices.