Organic bistable memory devices based on MoO₃ nanoparticle embedded Alq₃ structures

Organic bistable memory devices were fabricated by embedding a thin layer of molybdenum trioxide (MoO₃) between two tris-(8-hydroxyquinoline)aluminum (Alq₃) layers. The device exhibited excellent switching characteristics with an ON/OFF current ratio of 1.15 × 10³ at a read voltage of 1 V. The device showed repeatable write-erase capability and good stability in both the conductance states. These conductance states are non-volatile in nature and can be obtained by applying appropriate voltage pulses. The effect of MoO₃ layer thickness and its location in the Alq₃ matrix on characteristics of the memory device was investigated. The field emission scanning electron microscopy (FE-SEM) images of the MoO₃ layer revealed the presence of isolated nanoparticles. Based on the experimental results, a mechanism has been proposed for explaining the conductance switching of fabricated devices.