Related Experiment Video
Updated: Mar 8, 2026

Construction of a Wireless-Enabled Endoscopically Implantable Sensor for pH Monitoring with Zero-Bias Schottky Diode-based Receiver
Published on: August 27, 2021
A 11 mW 2.4 GHz 0.18 µm CMOS Transceivers for Wireless Sensor Networks
Bing Hou1, Hua Chen2, Zhiyu Wang3
1School of Information and Communication Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China. hanchen_hb@163.com.
Abstract:
In this paper, a low power transceiver for wireless sensor networks (WSN) is proposed. The system is designed with fully functional blocks including a receiver, a fractional-N frequency synthesizer, and a class-E transmitter, and it is optimized with a good balance among output power, sensitivity, power consumption, and silicon area. A transmitter and receiver (TX-RX) shared input-output matching network is used so that only one off-chip inductor is needed in the system. The power and area efficiency-oriented, fully-integrated frequency synthesizer is able to provide programmable output frequencies in the 2.4 GHz range while occupying a small silicon area. Implemented in a standard 0.18 μm RF Complementary Metal Oxide Semiconductor (CMOS) technology, the whole transceiver occupies a chip area of 0.5 mm² (1.2 mm² including bonding pads for a QFN package). Measurement results suggest that the design is able to work at amplitude shift keying (ASK)/on-off-keying (OOK) and FSK modes with up to 500 kbps data rate. With an input sensitivity of -60 dBm and an output power of 3 dBm, the receiver, transmitter and frequency synthesizer consumes 2.3 mW, 4.8 mW, and 3.9 mW from a 1.8 V supply voltage, respectively.
Related Concept Videos
Semiconductors
Metals such as copper (Cu), zinc (Zn), or lead (Pb) have low resistivity and feature conduction bands that are either not fully occupied or overlap with the valence band, making a bandgap non-existent. This allows electrons in the highest energy levels of the valence band to easily transition to the conduction band upon gaining...
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
Cut-off Frequency of BJT
Alpha Cut-Off Frequency: Pertinent to the common-base configuration, the alpha cut-off frequency defines the upper-frequency limit at which the current gain, alpha, remains stable. As...
Electronic Distance Measuring Instruments
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Bipolar Junction Transistor

