Data of ALD Al2O3 rear surface passivation, Al2O3 PERC cell performance, and cell efficiency loss mechanisms of Al2O3
Haibing Huang1, Jun Lv2, Yameng Bao3
1China Sunergy, No.123. Focheng West Road, Jiangning Zone, Nanjing, Jiangsu 211100, China; Aalto University, Department of Micro and Nanosciences, Tietotie 3, Espoo 02150, Finland.
Abstract:
This data article is related to the recently published article '20.8% industrial PERC solar cell: ALD Al2O3 rear surface passivation, efficiency loss mechanisms analysis and roadmap to 24%' (Huang et al., 2017) [1]. This paper is about passivated emitter and rear cell (PERC) structures and it describes the quality of the Al2O3 rear-surface passivation layer deposited by atomic layer deposition (ALD), in relation to the processing parameters (e.g. pre-clean treatment, deposition temperature, growth per cycle, and film thickness) and to the cell efficiency loss mechanisms. This dataset is made public in order to contribute to the limited available public data on industrial PERC cells, to be used by other researchers.
