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Robust Zero-Field Skyrmion Formation in FeGe Epitaxial Thin Films.

J C Gallagher¹, K Y Meng¹, J T Brangham¹

¹Department of Physics, The Ohio State University, Columbus, Ohio 43210, USA.

Physical Review Letters

|January 28, 2017

Summary

Researchers stabilized magnetic Skyrmions in iron-germanium (FeGe) films at room temperature and zero magnetic field. This breakthrough in B20 phase materials demonstrates robust Skyrmion formation without external magnetic fields.

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Area of Science:

Condensed Matter Physics
Materials Science
Spintronics

Background:

B20 phase magnetic materials are crucial for realizing magnetic Skyrmions.
Stabilizing Skyrmions at room temperature and zero magnetic field is a key challenge in the field.

Purpose of the Study:

To grow high-quality FeGe epitaxial films on Si(111).
To demonstrate the formation of Skyrmions in these films at room temperature and zero magnetic field.

Main Methods:

Epitaxial growth of phase-pure, high crystalline quality FeGe films on Si(111).
Hall effect measurements to detect Skyrmion formation via the topological Hall effect.

Main Results:

Formation of high-density Skyrmions in FeGe films between 5 and 275 K.
Observation of a significant topological Hall effect at zero magnetic field, indicating a robust Skyrmion phase.

Conclusions:

FeGe epitaxial films on Si(111) support a robust Skyrmion phase.
Room temperature, zero-field Skyrmion stabilization is achievable in these materials, paving the way for spintronic applications.