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Updated: Mar 8, 2026

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
Published on: November 1, 2013
D Elmaghraoui1, M Triki1, S Jaziri1,2
1Laboratoire de Physique de la Matière Condensée, Faculté des Sciences de Tunis, Campus Universitaire, 2092 El Manar, Tunisia.
This study theoretically investigates excitonic complexes in polar gallium nitride/aluminum gallium nitride quantum dots (QDs). Controlling QD size is key for producing entangled photon pairs by tuning exciton-biexciton energy separation.
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