Attachable and flexible aluminum oxide resistive non-volatile memory arrays fabricated on tape as the substrate

We fabricated 8 × 8 arrays of non-volatile resistive memory devices on commercially available Scotch^® Magic^™ tape as a flexible substrate. The memory devices consist of double active layers of Al₂O₃ with a structure of Au/Al₂O₃/Au/Al₂O₃/Al (50 nm/20 nm/20 nm/20 nm/50 nm) on attachable tape substrates. Because the memory devices were fabricated using only dry and low temperature processes, the tape substrate did not suffer from any physical or chemical damage during the fabrication. The fabricated memory devices were turned to the low resistance state at ∼3.5 V and turned to the high resistance state at ∼10 V with a negative differential resistance region after ∼5 V, showing typical unipolar non-volatile resistive memory behavior. The memory devices on the tape substrates exhibited reasonable electrical performances including a high ON/OFF ratio of 10⁴, endurance over 200 cycles of reading/writing processes, and retention times of over 10⁴ s in both the flat and bent configurations.