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Combination Of Resistors

Combination Of Resistors

Electrical devices in any circuit can be connected either by series or parallel connections. Additionally, circuits can be connected involving both of these connections, known as combination or complex circuits. As these circuits have complex resistor connections, it is necessary to identify different parts as either series or parallel connections, then the whole combination of series and parallel resistors can be reduced to a single equivalent resistance. With the known equivalent resistance...

Resistors In Parallel

Resistors In Parallel

Resistors are in parallel when one end of all the resistors are connected to a continuous wire of negligible resistance and the other end of all the resistors are also connected to one another through a continuous wire of negligible resistance. In the case of a parallel configuration, the potential drop across each resistor is the same. Current through each resistor can be found using Ohm’s law, I = V/R, where the voltage is constant across each resistor. The sum of the individual currents...

MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

Non-ohmic Devices

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...

Resistors In Series

Resistors In Series

A resistor is an ohmic device that limits the flow of charge in a circuit. Most circuits have more than one resistor. If several resistors are connected together and connected to a battery, the current supplied by the battery depends on the equivalent resistance of the circuit. The equivalent resistance of a combination of resistors depends on both their individual values and how they are connected. The simplest combination of resistors is the series combination.
In a series circuit, the...

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Related Experiment Video

Updated: Mar 7, 2026

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

A Novel Read Scheme for Large Size One-Resistor Resistive Random Access Memory Array.

Mohammed Zackriya^1,2, Harish M Kittur², Albert Chin¹

¹Department of Electronics Engineering, National Chiao Tung University, Hsinchu 300, Taiwan.

Scientific Reports

|February 11, 2017

Summary

Researchers developed a record-large 128x128 One-Resistor (1R) RRAM array, overcoming sneak path issues. This advancement enables low read currents without selector devices, paving the way for denser memory applications.

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Area of Science:

Materials Science
Electrical Engineering
Computer Engineering

Background:

Resistive Random-Access Memory (RRAM) faces challenges with sneak paths limiting array scalability.
Existing RRAM arrays often require selector devices to mitigate sneak path issues, adding complexity and cost.

Purpose of the Study:

To realize a record-large 128x128 One-Resistor (1R) RRAM array.
To demonstrate effective sneak path mitigation without selector devices.
To achieve extremely low read currents in a large RRAM array.

Main Methods:

Fabrication of a 128x128 RRAM array using a novel One-Resistor (1R) architecture.
Implementation of a circuit design featuring a reference point using a half-selected cell.
Integration of a differential amplifier (DA) for improved read performance.

Main Results:

Successfully realized a 128x128 1R RRAM array, a record size.
Achieved a significant Low-Resistive State (LRS)/High-Resistive State (HRS) current difference (378 nA/16 nA) even in worst-case cells, without selectors.
Attained extremely low read current of 9.7 μA through device and circuit co-design.

Conclusions:

The developed 1R RRAM array architecture effectively overcomes sneak path limitations for large-scale integration.
The novel circuit design with a reference point and DA enables high performance and low read currents.
This work presents a significant step towards practical, high-density RRAM non-volatile memory.