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Published on: October 5, 2013
Effect of interface on epitaxy and magnetism in h-RFeO3/Fe3O4/Al2O3 films (R = Lu, Yb)
Xiaozhe Zhang1,2, Yuewei Yin2, Sen Yang1
1School of Science, MOE Key Laboratory for Nonequilibrium Synthesis and Modulation of Condensed Matter, Xi'an Jiaotong University, Xi'an 710049, People's Republic of China.
Abstract:
We have carried out the growth of h-RFeO3 (0 0 1) (R = Lu, Yb) thin films on Fe3O4 (1 1 1)/Al2O3 (0 0 1) substrates, and studied the effect of the h-RFeO3 (0 0 1)/Fe3O4 (1 1 1) interfaces on the epitaxy and magnetism. The observed epitaxial relations between h-RFeO3 and Fe3O4 indicate an unusual matching of Fe sub-lattices rather than a matching of O sub-lattices. The out-of-plane direction was found to be the easy magnetic axis for h-YbFeO3 (0 0 1) but the hard axis for Fe3O4 (1 1 1) in the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1)/Al2O3 (0 0 1) films, suggesting a perpendicular magnetic alignment at the h-YbFeO3 (0 0 1)/Fe3O4 (1 1 1) interface. These results indicate that Fe3O4 (1 1 1)/Al2O3 (0 0 1) could be a promising substrate for epitaxial growth of h-RFeO3 films of well-defined interface and for exploiting their spintronic properties.

