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Fluctuation microscopy analysis of amorphous silicon models.

J M Gibson1, M M J Treacy2

  • 1Northeastern University, Department of Physics, Boston MA 02115, USA; FAMU/FSU Joint College of Engineering, 225 Pottsdamer Street, Tallahassee, FL 32310, United States.

Ultramicroscopy
|February 14, 2017
PubMed
Summary

This study uses fluctuation electron microscopy (FEM) and correlograph analysis to reveal the structure of amorphous silicon. Results indicate a composite material is necessary to explain experimental data for disordered materials.

Keywords:
AmorphousFluctuationsMedium_range_orderNanodiffractionSTEMSilicon

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Computational Modeling

Background:

  • Amorphous silicon's atomic structure remains challenging to characterize.
  • Understanding disordered materials is crucial for semiconductor applications.

Purpose of the Study:

  • To develop and apply advanced computational methods for analyzing amorphous silicon structure.
  • To investigate the structural correlations and composite nature of amorphous semiconductors.

Main Methods:

  • Utilized computer-generated models and fluctuation electron microscopy (FEM).
  • Employed variable resolution FEM to measure correlation length.
  • Applied correlograph analysis to determine structural motifs and variance.

Main Results:

  • Successfully identified structural correlations in amorphous silicon.
  • Introduced correlograph variance for measuring paracrystalline composite volume fraction.
  • Demonstrated that experimental data is best explained by a substantially paracrystalline composite model.

Conclusions:

  • The proposed methods provide precise measurements for amorphous semiconductors.
  • Findings are applicable to a broader range of disordered materials.
  • Confirms the composite nature of amorphous silicon structure.