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    We developed a new coupler for germanium-on-silicon photodetectors that improves performance under high power. This mode-evolution coupler boosts photocurrent and opto-electrical bandwidth, enabling advanced silicon photonics applications.

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    Area of Science:

    • Photonics
    • Optoelectronics
    • Materials Science

    Background:

    • Germanium-on-silicon (GeSi) photodetectors are crucial for integrated photonics.
    • High input powers can cause saturation effects like carrier screening, limiting detector performance.
    • Conventional coupling methods struggle with efficient light delivery to the germanium region.

    Purpose of the Study:

    • To introduce a novel mode-evolution-based coupler for GeSi photodetectors.
    • To enhance high saturation power performance by ensuring uniform illumination of the germanium region.
    • To overcome limitations of existing detectors under high optical power.

    Main Methods:

    • Design and fabrication of a mode-evolution-based coupler.
    • Integration of the coupler with germanium-on-silicon photodetectors.
    • Characterization of photocurrent generation and opto-electrical bandwidth under high-power illumination.

    Main Results:

    • Demonstrated uniform illumination of the intrinsic germanium region, reducing saturation effects.
    • Achieved 70% higher photocurrent generation (9.1–15.5 mA) compared to conventional detectors.
    • Obtained over 40 times higher opto-electrical bandwidth (0.7–31 GHz) under high-power conditions.

    Conclusions:

    • The mode-evolution coupler significantly enhances the high-power and high-speed performance of GeSi photodetectors.
    • The compact nature of the coupling method is advantageous for integrated systems.
    • This technology opens new avenues for advanced applications in silicon photonics.