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Luminescent YbVO4 by atomic layer deposition.

Michael Getz1, Per-Anders Hansen1, Mohammed A K Ahmed1

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Thin films of ytterbium vanadate (YbVO4) were created using atomic layer deposition. These films efficiently convert UV light to visible and near-infrared light, with optimized deposition and annealing for enhanced performance.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Solid State Chemistry

Background:

  • Advanced materials are crucial for optoelectronic applications.
  • Thin films offer unique properties for light conversion technologies.

Purpose of the Study:

  • To deposit UV-to-visible and near-infrared converting YbVO4 thin films using atomic layer deposition (ALD).
  • To investigate the structural and optical properties of the deposited films.
  • To determine optimal deposition and annealing conditions for enhanced luminescence.

Main Methods:

  • Atomic layer deposition (ALD) using Yb(thd)3 and VO(thd)2 precursors with O3.
  • Post-deposition annealing at temperatures ranging from 400-1000 °C.
  • Characterization using X-ray diffraction (XRD), ellipsometry, and X-ray fluorescence (XRF).

Main Results:

  • Optimal YbVO4 film deposition achieved with a 1:3 pulse ratio of Yb(thd)3 to VO(thd)2.
  • Annealing at 400-1000 °C improved crystallinity and luminescence.
  • Presence of excess V2O5 accelerated crystallization, enabling it at 500 °C via a flux-aided process.

Conclusions:

  • ALD is a viable technique for producing YbVO4 thin films for light conversion.
  • Optimized deposition and annealing parameters are critical for achieving desired optical and structural properties.
  • V2O5-assisted crystallization offers a pathway for low-temperature processing.