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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
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Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

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Dislocation mechanisms and 3D twin architectures generate exceptional strength-ductility-toughness combination in

Zijiao Zhang1, Hongwei Sheng2, Zhangjie Wang3

  • 1Center of Electron Microscopy &State Key Laboratory of Silicon Materials, Department of Materials Science &Engineering, Zhejiang University, Hangzhou 310027, China.

Nature Communications
|February 21, 2017
PubMed

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