Multicolor light-emitting devices with Tb₂O₃ on silicon

Area of Science:

• Materials Science
• Optoelectronics
• Semiconductor Physics

Background:

• Silicon (Si)-based light-emitting devices are crucial for integrated optoelectronics.
• Achieving efficient light emission from silicon remains a significant challenge.

Purpose of the Study:

• To develop novel Si-based light-emitting devices using terbium oxide (Tb2O3).
• To investigate the electroluminescence properties and mechanisms of Tb2O3 on Si substrates.

Main Methods:

• Fabrication of Tb2O3 thin films on Si substrates.
• Characterization of electroluminescence (EL) emission spectra and turn-on voltage.
• Analysis of rare-earth ion (Tb3+) transitions responsible for light emission.

Main Results:

• Intense green electroluminescence observed from Tb2O3/Si devices with a low turn-on voltage of approximately 8 V.
• Green emission attributed to characteristic 4f-4f transitions of Tb3+ ions.
• Visible and near-infrared electroluminescence achieved in rare-earth (Eu3+, Sm3+, Yb3+) doped Tb2O3 devices.

Conclusions:

• Tb2O3 is a promising material for efficient Si-based light-emitting devices.
• The study provides insights into electroluminescence mechanisms in rare-earth doped oxides on silicon.
• These findings pave the way for advanced silicon photonics and optoelectronic applications.